2SC1008 0.7a , 80 v npn plastic encapsulated transistor elektronische bauelemente 14-feb-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c e k f d b g h j ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? general purpose switching and amplification. classification of h fe product-rank 2SC1008-r 2SC1008-q 2SC1008-y 2SC1008-g range 40~80 70~140 120~240 200~400 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 80 v collector to emitter voltage v ceo 60 v emitter to base voltage v ebo 8 v collector current - continuous i c 0.7 a collector power dissipation p c 800 mw thermal resistance from junction to ambient r ja 156 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 80 - - v i c =0.1ma, i e =0 collector to emitter breakdown voltage v (br)ceo 60 - - v i c =10ma, i b =0 emitter to base br eakdown voltage v (br)ebo 8 - - v i e =0.01ma, i c =0 collector cut-off current i cbo - - 0.1 a v cb =60v, i e =0 emitter cut-off current i ebo - - 0.1 a v eb =5v, i c =0 dc current gain h fe 40 - 400 v ce =2v, i c =50ma collector to emitter saturation voltage v ce(sat) - - 0.4 v i c =500ma, i b =50ma base to emitter voltage v be(sat) - - 1.1 v i c =500ma, i b =50ma transition frequency f t 30 - - mhz v ce =10v, i c =50ma collector output capacitance c ob - 8 - pf v cb =10v, i c =0, f=1mhz to-92 ref. millimete r min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76 ? emitte r ? base ? collector
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